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Re: Power MOSET gate capacitance variations

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Winfield Hill <hill@rowland.harvard.edu> wrote:
> Piotr Wyderski wrote...
>>
>> Winfield Hill wrote:
>>
>>>   That's not a bad part, one of the new SuperJunction
>>>   MOSFETs, with nice low drain capacitances.
>>
>> Not bad for sure, but not that shining either. 400mOhm
>> in 2016 is not a jaw-dropper, the 12 years older 20N60
>> has just 150mOhm, but was *much* more expensive back then.
>
> My continually-updated MOSFET spreadsheet (a portion
> of which appears in a few places in AoE III) now has
> over 1300 items, 380 in the 500 to 650-volt range.
> 180 of these have lower Rds(on) than the IPD60R400CE.
> So it's entire a matter of choosing your tradeoffs.
>
> There are a many reasons against selecting a lower
> Rds(on): high capacitance, poor distributor stock,
> high cost, larger package, no SMT package avail...

That sounds very handy. Is it possible to purchase a copy?

Thank you,

--
Don Kuenz, KB7RPU

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Power MOSET gate capacitance variations Piotr Wyderski <peter.pan@neverland.mil> - 2017-12-25 20:40 +0100
  Re: Power MOSET gate capacitance variations Joerg <news@analogconsultants.com> - 2017-12-25 12:08 -0800
    Re: Power MOSET gate capacitance variations Cursitor Doom <curd@notformail.com> - 2017-12-25 20:33 +0000
      Re: Power MOSET gate capacitance variations Joerg <news@analogconsultants.com> - 2017-12-25 12:41 -0800
    Re: Power MOSET gate capacitance variations Jim Thompson <To-Email-Use-The-Envelope-Icon@On-My-Web-Site.com> - 2017-12-25 13:57 -0700
      Re: Power MOSET gate capacitance variations amdx <nojunk@knology.net> - 2017-12-26 07:48 -0600
  Re: Power MOSET gate capacitance variations Chris Jones <lugnut808@spam.yahoo.com> - 2017-12-26 23:10 +1100
    Re: Power MOSET gate capacitance variations "Tim Williams" <tiwill@seventransistorlabs.com> - 2017-12-26 09:35 -0600
      Re: Power MOSET gate capacitance variations Phil Hobbs <pcdhSpamMeSenseless@electrooptical.net> - 2017-12-26 14:57 -0500
      Re: Power MOSET gate capacitance variations Chris Jones <lugnut808@spam.yahoo.com> - 2017-12-27 22:48 +1100
    Re: Power MOSET gate capacitance variations Phil Hobbs <pcdhSpamMeSenseless@electrooptical.net> - 2017-12-26 12:58 -0500
  Re: Power MOSET gate capacitance variations Winfield Hill <hill@rowland.harvard.edu> - 2017-12-27 05:32 -0800
    Re: Power MOSET gate capacitance variations Piotr Wyderski <peter.pan@neverland.mil> - 2017-12-27 16:15 +0100
      Re: Power MOSET gate capacitance variations Winfield Hill <hill@rowland.harvard.edu> - 2017-12-27 08:47 -0800
        Re: Power MOSET gate capacitance variations "Tim Williams" <tiwill@seventransistorlabs.com> - 2017-12-27 11:47 -0600
        Re: Power MOSET gate capacitance variations Piotr Wyderski <peter.pan@neverland.mil> - 2017-12-31 11:06 +0100
          Re: Power MOSET gate capacitance variations "Tim Williams" <tiwill@seventransistorlabs.com> - 2017-12-31 10:43 -0600
          Re: Power MOSET gate capacitance variations Winfield Hill <hill@rowland.harvard.edu> - 2017-12-31 10:32 -0800
            Re: Power MOSET gate capacitance variations Don Kuenz <g@crcomp.net> - 2017-12-31 20:20 +0000
              Re: Power MOSET gate capacitance variations Winfield Hill <hill@rowland.harvard.edu> - 2018-01-01 17:29 -0800
                Re: Power MOSET gate capacitance variations Don Kuenz <g@crcomp.net> - 2018-01-02 03:06 +0000
                Re: Power MOSET gate capacitance variations Don Kuenz <g@crcomp.net> - 2018-01-03 00:18 +0000
                Re: Power MOSET gate capacitance variations Winfield Hill <hill@rowland.harvard.edu> - 2018-01-02 18:00 -0800
                Re: Power MOSET gate capacitance variations "Tim Williams" <tiwill@seventransistorlabs.com> - 2018-01-02 22:53 -0600
                Re: Power MOSET gate capacitance variations krw@notreal.com - 2018-01-03 21:35 -0500

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