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Groups > sci.electronics.design > #489398
| From | Piotr Wyderski <peter.pan@neverland.mil> |
|---|---|
| Newsgroups | sci.electronics.design |
| Subject | Re: Power MOSET gate capacitance variations |
| Date | 2017-12-27 16:15 +0100 |
| Organization | ATMAN - ATM S.A. |
| Message-ID | <p20de8$osu$1@node2.news.atman.pl> (permalink) |
| References | <p1rk82$e9r$1@node2.news.atman.pl> <p207d601gse@drn.newsguy.com> |
Winfield Hill wrote: > With such a high capacitance, it appears you're talking > about a power MOSFET (it'd be nice to know the type). Yes, as the title says. The part is IPD60R400CEATMA1 -- maybe not the best in its class, but dirt cheap and sufficient. > As you know, these are made with a vertical structure > with a repeating fine-pitched laterally-stacked pattern. > The exact height of the vertical structure is probably > not very well controlled, and the lateral (not vertical) > gate oxide thicknesses may also not be well controlled. The origin of that spread would be obvious for parts from different wafers, but for a given wafer the oxide thickness should be almost constant, even if one is not willing to control it tightly. I have no evidence that the parts are from the same wafer, but why should the factory mix them before encapsulation in the reel's compartments? Best regards, Piotr
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Power MOSET gate capacitance variations Piotr Wyderski <peter.pan@neverland.mil> - 2017-12-25 20:40 +0100
Re: Power MOSET gate capacitance variations Joerg <news@analogconsultants.com> - 2017-12-25 12:08 -0800
Re: Power MOSET gate capacitance variations Cursitor Doom <curd@notformail.com> - 2017-12-25 20:33 +0000
Re: Power MOSET gate capacitance variations Joerg <news@analogconsultants.com> - 2017-12-25 12:41 -0800
Re: Power MOSET gate capacitance variations Jim Thompson <To-Email-Use-The-Envelope-Icon@On-My-Web-Site.com> - 2017-12-25 13:57 -0700
Re: Power MOSET gate capacitance variations amdx <nojunk@knology.net> - 2017-12-26 07:48 -0600
Re: Power MOSET gate capacitance variations Chris Jones <lugnut808@spam.yahoo.com> - 2017-12-26 23:10 +1100
Re: Power MOSET gate capacitance variations "Tim Williams" <tiwill@seventransistorlabs.com> - 2017-12-26 09:35 -0600
Re: Power MOSET gate capacitance variations Phil Hobbs <pcdhSpamMeSenseless@electrooptical.net> - 2017-12-26 14:57 -0500
Re: Power MOSET gate capacitance variations Chris Jones <lugnut808@spam.yahoo.com> - 2017-12-27 22:48 +1100
Re: Power MOSET gate capacitance variations Phil Hobbs <pcdhSpamMeSenseless@electrooptical.net> - 2017-12-26 12:58 -0500
Re: Power MOSET gate capacitance variations Winfield Hill <hill@rowland.harvard.edu> - 2017-12-27 05:32 -0800
Re: Power MOSET gate capacitance variations Piotr Wyderski <peter.pan@neverland.mil> - 2017-12-27 16:15 +0100
Re: Power MOSET gate capacitance variations Winfield Hill <hill@rowland.harvard.edu> - 2017-12-27 08:47 -0800
Re: Power MOSET gate capacitance variations "Tim Williams" <tiwill@seventransistorlabs.com> - 2017-12-27 11:47 -0600
Re: Power MOSET gate capacitance variations Piotr Wyderski <peter.pan@neverland.mil> - 2017-12-31 11:06 +0100
Re: Power MOSET gate capacitance variations "Tim Williams" <tiwill@seventransistorlabs.com> - 2017-12-31 10:43 -0600
Re: Power MOSET gate capacitance variations Winfield Hill <hill@rowland.harvard.edu> - 2017-12-31 10:32 -0800
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