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Re: Power MOSET gate capacitance variations

From Piotr Wyderski <peter.pan@neverland.mil>
Newsgroups sci.electronics.design
Subject Re: Power MOSET gate capacitance variations
Date 2017-12-27 16:15 +0100
Organization ATMAN - ATM S.A.
Message-ID <p20de8$osu$1@node2.news.atman.pl> (permalink)
References <p1rk82$e9r$1@node2.news.atman.pl> <p207d601gse@drn.newsguy.com>

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Winfield Hill wrote:

>   With such a high capacitance, it appears you're talking
>   about a power MOSFET (it'd be nice to know the type).

Yes, as the title says. The part is IPD60R400CEATMA1
-- maybe not the best in its class, but dirt cheap and sufficient.

>   As you know, these are made with a vertical structure
>   with a repeating fine-pitched laterally-stacked pattern.
>   The exact height of the vertical structure is probably
>   not very well controlled, and the lateral (not vertical)
>   gate oxide thicknesses may also not be well controlled.

The origin of that spread would be obvious for parts from
different wafers, but for a given wafer the oxide thickness
should be almost constant, even if one is not willing to
control it tightly. I have no evidence that the parts are
from the same wafer, but why should the factory mix them
before encapsulation in the reel's compartments?

	Best regards, Piotr

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Thread

Power MOSET gate capacitance variations Piotr Wyderski <peter.pan@neverland.mil> - 2017-12-25 20:40 +0100
  Re: Power MOSET gate capacitance variations Joerg <news@analogconsultants.com> - 2017-12-25 12:08 -0800
    Re: Power MOSET gate capacitance variations Cursitor Doom <curd@notformail.com> - 2017-12-25 20:33 +0000
      Re: Power MOSET gate capacitance variations Joerg <news@analogconsultants.com> - 2017-12-25 12:41 -0800
    Re: Power MOSET gate capacitance variations Jim Thompson <To-Email-Use-The-Envelope-Icon@On-My-Web-Site.com> - 2017-12-25 13:57 -0700
      Re: Power MOSET gate capacitance variations amdx <nojunk@knology.net> - 2017-12-26 07:48 -0600
  Re: Power MOSET gate capacitance variations Chris Jones <lugnut808@spam.yahoo.com> - 2017-12-26 23:10 +1100
    Re: Power MOSET gate capacitance variations "Tim Williams" <tiwill@seventransistorlabs.com> - 2017-12-26 09:35 -0600
      Re: Power MOSET gate capacitance variations Phil Hobbs <pcdhSpamMeSenseless@electrooptical.net> - 2017-12-26 14:57 -0500
      Re: Power MOSET gate capacitance variations Chris Jones <lugnut808@spam.yahoo.com> - 2017-12-27 22:48 +1100
    Re: Power MOSET gate capacitance variations Phil Hobbs <pcdhSpamMeSenseless@electrooptical.net> - 2017-12-26 12:58 -0500
  Re: Power MOSET gate capacitance variations Winfield Hill <hill@rowland.harvard.edu> - 2017-12-27 05:32 -0800
    Re: Power MOSET gate capacitance variations Piotr Wyderski <peter.pan@neverland.mil> - 2017-12-27 16:15 +0100
      Re: Power MOSET gate capacitance variations Winfield Hill <hill@rowland.harvard.edu> - 2017-12-27 08:47 -0800
        Re: Power MOSET gate capacitance variations "Tim Williams" <tiwill@seventransistorlabs.com> - 2017-12-27 11:47 -0600
        Re: Power MOSET gate capacitance variations Piotr Wyderski <peter.pan@neverland.mil> - 2017-12-31 11:06 +0100
          Re: Power MOSET gate capacitance variations "Tim Williams" <tiwill@seventransistorlabs.com> - 2017-12-31 10:43 -0600
          Re: Power MOSET gate capacitance variations Winfield Hill <hill@rowland.harvard.edu> - 2017-12-31 10:32 -0800

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