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Re: Power MOSET gate capacitance variations

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Piotr Wyderski wrote...
>
>Winfield Hill wrote:
>
>>   With such a high capacitance, it appears you're talking
>>   about a power MOSFET (it'd be nice to know the type).
>
>Yes, as the title says. The part is IPD60R400CEATMA1
>-- maybe not the best in its class, but dirt cheap and sufficient.
>
>>   As you know, these are made with a vertical structure
>>   with a repeating fine-pitched laterally-stacked pattern.
>>   The exact height of the vertical structure is probably
>>   not very well controlled, and the lateral (not vertical)
>>   gate oxide thicknesses may also not be well controlled.
>
>The origin of that spread would be obvious for parts from
>different wafers, but for a given wafer the oxide thickness
>should be almost constant, even if one is not willing to
>control it tightly. I have no evidence that the parts are
>from the same wafer, but why should the factory mix them
>before encapsulation in the reel's compartments?

 That's not a bad part, one of the new SuperJunction
 MOSFETs, with nice low drain capacitances.  These
 have a severe horizontally-compressed architecture,
 with everything turned 90 degrees, changing all the
 de-facto rules we're used to.


-- 
 Thanks,
    - Win

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Thread

Power MOSET gate capacitance variations Piotr Wyderski <peter.pan@neverland.mil> - 2017-12-25 20:40 +0100
  Re: Power MOSET gate capacitance variations Joerg <news@analogconsultants.com> - 2017-12-25 12:08 -0800
    Re: Power MOSET gate capacitance variations Cursitor Doom <curd@notformail.com> - 2017-12-25 20:33 +0000
      Re: Power MOSET gate capacitance variations Joerg <news@analogconsultants.com> - 2017-12-25 12:41 -0800
    Re: Power MOSET gate capacitance variations Jim Thompson <To-Email-Use-The-Envelope-Icon@On-My-Web-Site.com> - 2017-12-25 13:57 -0700
      Re: Power MOSET gate capacitance variations amdx <nojunk@knology.net> - 2017-12-26 07:48 -0600
  Re: Power MOSET gate capacitance variations Chris Jones <lugnut808@spam.yahoo.com> - 2017-12-26 23:10 +1100
    Re: Power MOSET gate capacitance variations "Tim Williams" <tiwill@seventransistorlabs.com> - 2017-12-26 09:35 -0600
      Re: Power MOSET gate capacitance variations Phil Hobbs <pcdhSpamMeSenseless@electrooptical.net> - 2017-12-26 14:57 -0500
      Re: Power MOSET gate capacitance variations Chris Jones <lugnut808@spam.yahoo.com> - 2017-12-27 22:48 +1100
    Re: Power MOSET gate capacitance variations Phil Hobbs <pcdhSpamMeSenseless@electrooptical.net> - 2017-12-26 12:58 -0500
  Re: Power MOSET gate capacitance variations Winfield Hill <hill@rowland.harvard.edu> - 2017-12-27 05:32 -0800
    Re: Power MOSET gate capacitance variations Piotr Wyderski <peter.pan@neverland.mil> - 2017-12-27 16:15 +0100
      Re: Power MOSET gate capacitance variations Winfield Hill <hill@rowland.harvard.edu> - 2017-12-27 08:47 -0800
        Re: Power MOSET gate capacitance variations "Tim Williams" <tiwill@seventransistorlabs.com> - 2017-12-27 11:47 -0600
        Re: Power MOSET gate capacitance variations Piotr Wyderski <peter.pan@neverland.mil> - 2017-12-31 11:06 +0100
          Re: Power MOSET gate capacitance variations "Tim Williams" <tiwill@seventransistorlabs.com> - 2017-12-31 10:43 -0600
          Re: Power MOSET gate capacitance variations Winfield Hill <hill@rowland.harvard.edu> - 2017-12-31 10:32 -0800
            Re: Power MOSET gate capacitance variations Don Kuenz <g@crcomp.net> - 2017-12-31 20:20 +0000

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