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3D XPoint(of Intel Optane) is better than Z-NAND

Started bySky89 <Sky89@sky68.com>
First post2018-06-09 17:42 -0400
Last post2018-06-09 17:42 -0400
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  3D XPoint(of Intel Optane) is better than Z-NAND Sky89 <Sky89@sky68.com> - 2018-06-09 17:42 -0400

#8924 — 3D XPoint(of Intel Optane) is better than Z-NAND

FromSky89 <Sky89@sky68.com>
Date2018-06-09 17:42 -0400
Subject3D XPoint(of Intel Optane) is better than Z-NAND
Message-ID<pfhhjs$k3t$1@dont-email.me>
Hello,


I will explain sequential writes and random writes, so that
you understand that Z-NAND that is Samsung's tweaked flash technology 
has limitations, and 3D XPoint(of Intel Optane) is better than Z-NAND:

When people talk about sequential vs random writes to a file, they're 
generally drawing a distinction between writing without intermediate 
seeks ("sequential"), vs. a pattern of seek-write-seek-write-seek-write, 
etc. ("random").


So now read the following to understand:

The random write speed rating on Intel's P4800X is only 9% slower than 
the random read speed, while the Samsung SZ985 will have a random write 
speed that is 77% slower than random reads. Samsung has not been able to 
overcome all of the limitations of flash memory, but they have produced 
some impressive improvements.

Read more here:

http://forum.notebookreview.com/threads/samsung-launches-z-ssd-sz985-up-to-800gb-of-z-nand.813279/


Thank you,
Amine Moulay Ramdane.

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