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Re: The other power transistor aiming to dominate the age of SiC

From Phil Hobbs <pcdhSpamMeSenseless@electrooptical.net>
Newsgroups sci.electronics.design
Subject Re: The other power transistor aiming to dominate the age of SiC
Date 2024-09-06 13:36 -0400
Organization A noiseless patient Spider
Message-ID <27fac019-cd2d-b203-65aa-a4fb38394bae@electrooptical.net> (permalink)
References <vbekkp$26ot5$1@solani.org> <uu3mdjd6r3cpfs9e4kt3a9nr6hi0qjngk7@4ax.com> <vbf5th$s3c0$1@dont-email.me> <nremdjpr6jqtiluj9ripsafd67p1c5i0f2@4ax.com>

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On 2024-09-06 13:28, john larkin wrote:
> On Fri, 6 Sep 2024 15:08:33 -0000 (UTC), Phil Hobbs
> <pcdhSpamMeSenseless@electrooptical.net> wrote:
> 
>> john larkin <jlarkin_highland_tech> wrote:
>>> On Fri, 06 Sep 2024 10:13:44 GMT, Jan Panteltje <alien@comet.invalid>
>>> wrote:
>>>
>>>> The Other Power Transistor Aiming to Dominate the Age of SiC
>>>> https://www.electronicdesign.com/technologies/power/article/55138019/qorvo-optimizing-high-density-power-with-sic-devices-and-advanced-circuit-design
>>>> Explore the integration of silicon-carbide (SiC) technology and advanced
>>>> circuit design to enhance the overall density and efficiency of power converters.
>>>> See also:
>>>> https://www.qorvo.com/products/power-solutions/sic-fets
>>>>
>>>
>>> I used a Cree SiC fet, in my Pockels Cell driver. As a high-voltage
>>> switch, the figure of merit    Rdson * Cout   was many times better
>>> than I could get with any silicon mosfets. The circuit wouldn't have
>>> worked with silicon.
>>>
>>> But driving the gate was a real nuisance. I went from -5 to +18 in a
>>> couple of nanoseconds, which took a special GaN driver circuit on its
>>> own baby board,
>>>
>>> https://www.dropbox.com/scl/fi/y3r0qyo0hkubpc9td02y1/T852C_globbed.JPG?rlkey=gbkhx5zwaisr7e84acf5kuv80&raw=1
>>>
>>> The glob-top is mostly to protect the absurdly fragile EPC GaN fets,
>>> and give them a bit of extra cooling. Finding the right glob stuff was
>>> a project of its own.
>>>
>>> There are beginning to be some specific SiC gate drivers, but the
>>> market seems to be power conversion, so the drivers are fairly slow
>>> and have gigantic prop delays.
>>>
>>> I note that EPC said that they would never sell packaged parts, but
>>> now they do.
>>>
>>>
>>
>> I used to have an AD databook with an index. The entry for “digital” was
>> “You must be joking.”
>>
>> Cheers
>>
>> Phil Hobbs
> 
> Rumor has it that Intel is about to introduce a new line of opamps.
> 

Those poor guys are lucky to get anything to work these days.  Boeing, 
Intel, Volkswagen, who's next?

Financialization and ESG towards a better world, excelsior!

(Not so much.)

Cheers

Phil Hobbs

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Thread

The other power transistor aiming to dominate the age of SiC Jan Panteltje <alien@comet.invalid> - 2024-09-06 10:13 +0000
  Re: The other power transistor aiming to dominate the age of SiC john larkin <jlarkin_highland_tech> - 2024-09-06 07:37 -0700
    Re: The other power transistor aiming to dominate the age of SiC Phil Hobbs <pcdhSpamMeSenseless@electrooptical.net> - 2024-09-06 15:08 +0000
      Re: The other power transistor aiming to dominate the age of SiC john larkin <jl@650pot.com> - 2024-09-06 10:28 -0700
        Re: The other power transistor aiming to dominate the age of SiC Phil Hobbs <pcdhSpamMeSenseless@electrooptical.net> - 2024-09-06 13:36 -0400
          Re: The other power transistor aiming to dominate the age of SiC john larkin <jl@650pot.com> - 2024-09-06 12:15 -0700
          Re: The other power transistor aiming to dominate the age of SiC john larkin <jl@650pot.com> - 2024-09-06 14:29 -0700

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